Theme 1: Perpendicular Magnetic Materials

C-SPIN: Voltage controlled magnetoelectric switching in perpendicular magnetic tunnel junctions. Voltage controlled magnetoelectric switching
in perpendicular magnetic tunnel junctions.

This theme concentrates on research to develop magnetic materials that have perpendicular anisotropy (that is, their magnetic moments point up and down rather than left and right).? These materials have greatly improved scalability compared to conventional in-plane anisotropy materials and are therefore expected to improve the scalability, power consumption and stability of spin-based logic and memory systems.

Perpendicular magnetic materials allow magnetic tunnel junctions (MTJ) and giant magnetoresistance (GMR) devices to be scaled to dimensions less than 10-nm with low switching current density while maintaining stability at room temperature, a key attribute for practical computational systems.

C-SPIN: Block copolymer patterning of magnetic materials can lead to complex shape formation. Block copolymer patterning of magnetic
materials can lead to complex shape
formation.Link to related publication.

Photo credit: Wiley,

The researchers in this theme are developing new materials that have perpendicular aniostropy, low damping coeffient and high spin polarization ratio.? They are also developing techniques to control spin polarization using voltage (rather current), a revolutionary approach that could greatly improve power consumption and reliability in spin-based systems.? Futhermore, the center researchers are also developing new tunneling barriers and novel GMR devices that have giant magnetic resistance ratios.

Further information on the theme PIs can be found on the list at right.

 
 
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